EMI Sputter
Application：
Electronic Assembly
Semiconductor
Main advantages
| Item | Description | Remark | |
| Application | LGA PKG, BGA PKG, Strip | ||
| Ring Frame Size | Circle type : Phi 350mm, Active area : 280mm | ||
| EFEM | Load | 4Foup with Safety light curtain | Option |
| EFEM | Robot | Two arm ATM robot | |
| Loadlock | Heater | Operating temp : 80℃ ~ 120℃ | |
| Loadlock | Process vacuum | < 5.0 *10-2 torr | Base Vacuum : 5.0 * 10-3 torr |
| Plasma treatment | Plasma source type | ICP + Bias | 2chamber |
| Plasma treatment | process gas | Ar | Option : O2, N2..etc |
| Process module | Layer | SUS--> Cu --> Cu --> Cu --> Cu -->SUS | possible Cu >10um |
| Process module | Target type | Circular planer type | |
| Performance | TACT Time | 1.5min/Ring (40 Ring/hr) | Sus 0.2um / Cu 3.0um / Sus0.3um |
| Performance | Process Temp. | Max.100℃ | |
| Performance | Sputtering Non-Uniformity | <±5% (Max-Min/Avg.*2) | XRF or Ellipsometry |
| Performance | Adhesion | All 5B | ASTM D3359 |