LAZIN LODAS™ – CI8
Application：
Electronic Assembly
Semiconductor
Main advantages
Features：
Capable of inspecting both SiC single crystal wafers and epitaxial wafers.
Simultaneous inspection of surface defects, internal defects, and backside defects.
Four types of review images for defect analysis.
“AI Classify” classifies defects and determines whether they are good or failure.
Maintenance free.
World Primer! Hybrid inspection system using reflected scattered light, transmitted scattered light, and confocal
light.
Inspecting for defects that have not been inspected before.
Target defect : Particles, Scratches, Crystal defects
Specifications：
Inspection Laser： 405nm 200mW
Inspection Time：200sec（size：4inch）
Inspection Target：2 inches, 3 inches, 4 inches, 6 inches wafer
Equipment Size：W×D×H＝450×500×730mm